Impurity effects on the behavior of self-interstitial atom loops in electron-irradiated -iron

Abe, Yosuke  ; Sato, Yuki*; Suzudo, Tomoaki   ; Tsuru, Tomohito   ; Hashimoto, Naoyuki*; Onuki, Somei*

One-dimensional (1D) migration behavior of self-interstitial atom (SIA) loops was studied for specimens of -iron with different purities under electron irradiation using the HVEM at Hokkaido University. As increasing temperature, saturated loop number densities decreased and 1D jump distances became longer, indicating that the total concentration of trapping sites for SIA loops decreases at higher temperatures. According to the developed rate theory model, it was shown that the dependence of the irradiation intensity on the loop number density tends to be weaker with lowering the impurity concentration at room temperature.