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Reaction kinetics of oxygen molecule at SiO$$_{2}$$/Si(111) interface monitored in real time by X-ray photoelectron spectroscopy

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Nishimoto, Kiwamu*; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation kinetics at an SiO$$_{2}$$/Si(111) interface was monitored by O 1s and Si 2p photoelectron spectroscopy using synchrotron radiation to clarify the oxygen pressure dependence of oxidation rate. The initial oxygen uptake at the O$$_{2}$$ pressure of 4.6$$times$$10$$^{-5}$$ Pa and the substrate temperature of 500$$^{circ}$$C slowed down at about 0.4 nm, suggesting that the surface is covered with oxides. When the oxygen pressure was increased from 4.6$$times$$10$$^{-5}$$ Pa after saturation, the oxidation rate showed the increase depending on oxygen pressure difference. In addition to Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$, and Si$$^{4+}$$ components, Si$$_{alpha}$$ and Si$$_{beta}$$ components, which are associated with the interface strain, were examined carefully. To explain the observed correlation between the oxidation induced strain and the oxidation rate comprehensively, the vacancy and the emitted Si atoms from the interface are taken into account as oxygen adsorption sites.

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English

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Publication Year/Month

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Meeting title

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16th International Conference on Thin Films (ICTF-16)

Held date

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2014/10

Location (city)

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Dubrovnik

Location (country)

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Croatia

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DOI for research data

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Keywords

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no keyword

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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東北大学

Accesses

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- Accesses

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