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Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

Abderrahmane, A.*; Takahashi, Hiroki*; Tashiro, Tatsuya*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*

The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380 keV and fluences of 1$$times 10^{14}$$ cm$$^{-2}$$, 1$$times 10^{15}$$ cm$$^{-2}$$, 1$$times 10^{16}$$ cm$$^{-2}$$ is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 1$$times 10^{15}$$ cm$$^{-2}$$ the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

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