Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

Abderrahmane, A.*; Takahashi, Hiroki*; Tashiro, Tatsuya*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*

The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380 keV and fluences of 1 $times 10^{14}$ cm $^{-2}$ , 1 $times 10^{15}$ cm $^{-2}$ , 1 $times 10^{16}$ cm $^{-2}$ is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 1 $times 10^{15}$ cm $^{-2}$ the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

Language	:	English
Journal	:	AIP Conference Proceedings 1585
Volume	:
Number	:
Pages	:	p.123 - 127
Publication Year/Month	:	2014/02
Meeting title	:	The Irago Conference 2013
Held date	:	2013/10
Location (city)	:	Toyohashi
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1063/1.4866629
DOI for research data	:
Keywords	:	陽子線照射; AlGaN; GaN
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	豊橋技術科学大学

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InCites™	:	Percentile:51.08 Category:Physics, Applied
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Registration No. : BB20140413
JAEA Abstracts No. : 43000756
Paper Submission No. : 15858

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