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Report No.
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Evaluation of the yield for silicon-vacancy center formation by low-energy silicon ion implantation into diamond

Tamura, Shuto*; Koike, Godai*; Teraji, Tokuyuki*; Onoda, Shinobu; McGuinness, L.*; Rogers, L.*; Christoph, M.*; Naydenov, B.*; Wu, E.*; Yan, L.*; Jelezko, F.*; Oshima, Takeshi; Shinada, Takahiro*; Isoya, Junichi*; Tanii, Takashi*

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