Time-resolved observation of molecular adsorbed oxygen at Si(100)-21 surface using real-time synchrotron radiation photoelectron spectroscopy

Yoshigoe, Akitaka ; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

Understanding of fundamental aspects of oxidation at Si(100) surface using O $_{2}$ gas is essential for fabrication of gate-oxide films with the thickness of atomic-scale in Si-based MOSFET. The study of precursor states prior to dissociative adsorption is important to clarify the oxidation mechanism. We present the time-evolution of molecular chemisorbed oxygen observed by synchrotron radiation real-time photoelectron spectroscopy.

Language	:	Japanese
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Meeting title	:	2014年秋季第75回応用物理学会学術講演会
Held date	:	2014/09
Location (city)	:	札幌
Location (country)	:	日本
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Keywords	:	放射光; リアルタイム観察; 光電子分光; 表面反応; 酸化; シリコン
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20141763
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