Effect of oxidation-induced strain on thermal decomposition of ultrathin oxide grown on Si(111) and Si(001) surfaces

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Nishimoto, Kiwamu*; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

Although the oxide decomposition was observed to proceed via void nucleation and subsequent enlargement with SiO desorption and the void growth, it is still not clear what is a trigger to nucleate voids at SiO $_{2}$ /Si interface. Recently, we reported that the emission of Si atom caused by the oxidation-induced strain at SiO $_{2}$ /Si interface is likely responsible for nucleating voids. In this study, the thermal decomposition kinetics of ultrathin SiO $_{2}$ film on Si(001) and Si(111) surfaces have been investigated using real-time X-ray photoelectron spectroscopy with photon energy of 711 eV at JAEA beamline BLSU23, SPring-8 to confirm the void nucleation model.

Language	:	English
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Meeting title	:	7th International Symposium on Surface Science (ISSS-7)
Held date	:	2014/11
Location (city)	:	Matsue
Location (country)	:	Japan
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DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	Si oxide decomposition; synchrotron radiation photoelectron spectroscopy; SiO $_{2}$
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20142041
JAEA Abstracts No. :
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