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Effect of oxidation-induced strain on thermal decomposition of ultrathin oxide grown on Si(111) and Si(001) surfaces

Si(111)とSi(001)表面の極薄酸化膜の熱分解における酸化誘起歪の効果

Tang, J.*; 小川 修一*; 吉越 章隆 ; 西本 究*; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Nishimoto, Kiwamu*; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

Although the oxide decomposition was observed to proceed via void nucleation and subsequent enlargement with SiO desorption and the void growth, it is still not clear what is a trigger to nucleate voids at SiO$$_{2}$$/Si interface. Recently, we reported that the emission of Si atom caused by the oxidation-induced strain at SiO$$_{2}$$/Si interface is likely responsible for nucleating voids. In this study, the thermal decomposition kinetics of ultrathin SiO$$_{2}$$ film on Si(001) and Si(111) surfaces have been investigated using real-time X-ray photoelectron spectroscopy with photon energy of 711 eV at JAEA beamline BLSU23, SPring-8 to confirm the void nucleation model.

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