Dielectric response of laser-excited silicon at finite electron temperature

Sato, Shunsuke*; Shinohara, Yasushi*; Otobe, Tomohito; Yabana, Kazuhiro*

We calculate the dielectric response of excited crystalline silicon in electron thermal equilibrium by adiabatic time-dependent density functional theory (TDDFT) to model the response to irradiation by high-intensity laser pulses. We find that the extracted effective mass are in the range of 0.22-0.36 and lifetimes are in the range of 1-14 fs depending on the temperature.