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Report No.

Surface stress measurement of Si(111) 7$$times$$7 reconstruction by comparison with hydrogen-terminated 1$$times$$1 surface

Asaoka, Hidehito ; Uozumi, Yuki

We have focused on measurements of the surface stress in Si(111) as a function of 7$$times$$7 reconstruction by comparison with the hydrogen (H)-terminated Si(111) 1$$times$$1 surface. In order to obtain information on both the surface stress and the surface reconstruction simultaneously, we have combined the surface-curvature and the reflection-high-energy-electron-diffraction instrumentations in an identical ultrahigh vacuum system. The stress evolution shows a decrease of tensile stress corresponding to the formation of H-termination at the beginning of the atomic H exposure of Si(111) 7$$times$$7 surface. After the above treatment, a complete transformation of the surface structure occurs from the reconstructed surface to the 1$$times$$1 one. As a result, we find the H-terminated Si(111) 1$$times$$1 surface releases 1.7 N/m (=J/m$$^{2}$$), or (1.4 eV/(1$$times$$1 unit cell)), of the surface energy from the strong tensile Si(111) 7$$times$$7 reconstruction.



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