Recovery of the degraded characteristics of SiC MOSFETs irradiated with -rays by thermal treatments

Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi

no abstracts in English

Language	:	Japanese
Journal	:
Volume	:
Number	:
Pages	:
Publication Year/Month	:
Meeting title	:	先進パワー半導体分科会第1回講演会
Held date	:	2014/11
Location (city)	:	名古屋
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	炭化ケイ素(SiC); 金属-酸化膜-半導体電界効果トランジスタ; ガンマ線照射効果; 劣化特性熱安定性
Research Facility	:	コバルト60照射施設
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	埼玉大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : BB20142457
JAEA Abstracts No. :
Paper Submission No. :

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.