Single-crystal growth and de Haas-van Alphen effect study of ThRuSi

Matsumoto, Yuji*; Haga, Yoshinori ; Tateiwa, Naoyuki ; Aoki, Haruyoshi*; Kimura, Noriaki*; Matsuda, Tatsuma*; Yamamoto, Etsuji ; Fisk, Z.; Yamagami, Hiroshi*

Electronic differences between heavy Fermion CeRuSi and isoelectronic nonmagnetic ThRuSi have been investigated. We succeeded in observing the de Haas-van Alphen oscillation in a high quality single crystal of ThRuSi. The mean free path of conduction carriers has been estimated as 6400 , indicating the high quality of the present sample.

Language	:	English
Journal	:	JPS Conference Proceedings (Internet)
Volume	:	3
Number	:
Pages	:	p.011096_1 - 011096_5
Publication Year/Month	:	2014/06
Meeting title	:	International Conference on Strongly Correlated Electron Systems (SCES 2013)
Held date	:	2013/08
Location (city)	:	Tokyo
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.7566/JPSCP.3.011096
DOI for research data	:
Keywords	:	actinide; Fermi surface
Research Facility	:	第4研究棟
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	名古屋工業大学; 東北大学

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Registration No. : BB20142379
JAEA Abstracts No. : 43000065
Paper Submission No. : 15197

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