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Report No.
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Single-crystal growth and de Haas-van Alphen effect study of ThRu$$_2$$Si$$_2$$

Matsumoto, Yuji*; Haga, Yoshinori; Tateiwa, Naoyuki; Aoki, Haruyoshi*; Kimura, Noriaki*; Matsuda, Tatsuma*; Yamamoto, Etsuji; Fisk, Z.; Yamagami, Hiroshi*

Electronic differences between heavy Fermion CeRu$$_2$$Si$$_2$$ and isoelectronic nonmagnetic ThRu$$_2$$Si$$_2$$ have been investigated. We succeeded in observing the de Haas-van Alphen oscillation in a high quality single crystal of ThRu$$_2$$Si$$_2$$. The mean free path of conduction carriers has been estimated as 6400 ${AA}$, indicating the high quality of the present sample.

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