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Single-crystal growth and de Haas-van Alphen effect study of ThRu$$_2$$Si$$_2$$

ThRu$$_2$$Si$$_2$$の単結晶育成とドハース・ファンアルフェン効果

松本 裕司*; 芳賀 芳範; 立岩 尚之; 青木 晴善*; 木村 憲彰*; 松田 達磨*; 山本 悦嗣; Fisk, Z.; 山上 浩志*

Matsumoto, Yuji*; Haga, Yoshinori; Tateiwa, Naoyuki; Aoki, Haruyoshi*; Kimura, Noriaki*; Matsuda, Tatsuma*; Yamamoto, Etsuji; Fisk, Z.; Yamagami, Hiroshi*

Electronic differences between heavy Fermion CeRu$$_2$$Si$$_2$$ and isoelectronic nonmagnetic ThRu$$_2$$Si$$_2$$ have been investigated. We succeeded in observing the de Haas-van Alphen oscillation in a high quality single crystal of ThRu$$_2$$Si$$_2$$. The mean free path of conduction carriers has been estimated as 6400 ${AA}$, indicating the high quality of the present sample.

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