SiSiの単結晶育成とドハース・ファンアルフェン効果松本 裕司*; 芳賀 芳範 
; 立岩 尚之 ; 青木 晴善*; 木村 憲彰*; 松田 達磨*; 山本 悦嗣 ; Fisk, Z.; 山上 浩志*
Matsumoto, Yuji*; Haga, Yoshinori; Tateiwa, Naoyuki; Aoki, Haruyoshi*; Kimura, Noriaki*; Matsuda, Tatsuma*; Yamamoto, Etsuji; Fisk, Z.; Yamagami, Hiroshi*
Electronic differences between heavy Fermion CeRuSi and isoelectronic nonmagnetic ThRuSi have been investigated. We succeeded in observing the de Haas-van Alphen oscillation in a high quality single crystal of ThRuSi. The mean free path of conduction carriers has been estimated as 6400 
, indicating the high quality of the present sample.
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: | English |
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: | 3 |
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ページ数 |
: | p.011096_1 - 011096_5 |
発行年月 |
: | 2014/06 |
発表会議名 |
: | International Conference on Strongly Correlated Electron Systems (SCES 2013) |
開催年月 |
: | 2013/08 |
開催都市 |
: | Tokyo |
開催国 |
: | Japan |
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