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5$$f$$-contributions to Fermi surfaces in (U,Th)Ru$$_2$$Si$$_2$$

(U,Th)Ru$$_2$$Si$$_2$$における5f電子のフェルミ面への寄与

芳賀 芳範 

Haga, Yoshinori

Electronic states of (U,Th)Ru$$_2$$Si$$_2$$ are studied experimentally to reveal the contribution of 5f electrons in URu$$_2$$Si$$_2$$ which is extensively studied because of unusual properties. The reference compound ThRu$$_2$$Si$$_2$$ without 5f electrons is well understood by the first principle calculations. However, the substitution of Th by small amount of U enhances the effective mass of the conduction carrier, leaving the Fermi surface volume unchanged. The behavior is significantly different from dilute magnetic alloys described by the Kondo effect.

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