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Report No.
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Synthesis of heterostructured SiC and C-SiC nanotubes by ion irradiation-induced changes in crystallinity

Taguchi, Tomitsugu; Yamamoto, Shunya; Kodama, Katsuaki  ; Asaoka, Hidehito 

Amorphous SiC nanotubes are successfully synthesized by 340 keV Si$$^{+}$$ ions irradiation of polycrystalline SiC nanotubes for the first time. A polycrystalline/amorphous heterostructure SiC nanotube, in which polycrystalline SiC and amorphous SiC coexist in the same nanotube, is also synthesized by ions irradiation with a mask in front of polycrystalline SiC nanotube. According to electron energy loss spectroscopy evaluation, the plasmon energies of SiC nanotube change rapidly at the interface between polycrystalline and amorphous regions. The volume swelling by amorphization evaluated from the differences of plasmon energies is approximately 5.0%. This result reveals that the further relaxed amorphous SiC nanotubes with higher density can be produced. The graphitic shells in carbon layer of C-SiC nanotube gradually bend to the radial direction of nanotube by the ion irradiation. Since the graphite (002) spots in the selected area electron diffraction pattern are clearly observed even after the ion irradiation, the carbon layer in C-SiC nanotube has certain crystallinity. Moreover, the new multi-walled carbon nanotube with the graphitic shells completely parallel to the radial direction of nanotube is also produced inside the amorphous SiC tubular layer in the case of C-SiC nanotube with large caliber.

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Category:Chemistry, Physical

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