Synthesis of heterostructured SiC and C-SiC nanotubes by ion irradiation-induced changes in crystallinity

イオン照射を用いた結晶性変化によるヘテロ構造SiC及びC-SiCナノチューブの創製

田口 富嗣; 山本 春也; 樹神 克明   ; 朝岡 秀人  

Taguchi, Tomitsugu; Yamamoto, Shunya; Kodama, Katsuaki; Asaoka, Hidehito

340KeVのSiイオン照射により、多結晶SiCナノチューブからアモルファスSiCナノチューブの合成に初めて成功した。また、マスクを用いたイオン照射により、一本のナノチューブ内に多結晶領域とアモルファス領域が混在する多結晶/アモルファスヘテロ構造SiCナノチューブの合成にも成功した。内部にカーボン層を有するC-SiCナノチューブについても、イオン照射を行った。その結果、照射前では、カーボン層間はチューブの長さ方向に平行であったが、照射後、チューブの径方向に平行になることから、イオン照射によりカーボン層間方向が90傾くことを明らかにした。

Amorphous SiC nanotubes are successfully synthesized by 340 keV Si ions irradiation of polycrystalline SiC nanotubes for the first time. A polycrystalline/amorphous heterostructure SiC nanotube, in which polycrystalline SiC and amorphous SiC coexist in the same nanotube, is also synthesized by ions irradiation with a mask in front of polycrystalline SiC nanotube. According to electron energy loss spectroscopy evaluation, the plasmon energies of SiC nanotube change rapidly at the interface between polycrystalline and amorphous regions. The volume swelling by amorphization evaluated from the differences of plasmon energies is approximately 5.0%. This result reveals that the further relaxed amorphous SiC nanotubes with higher density can be produced. The graphitic shells in carbon layer of C-SiC nanotube gradually bend to the radial direction of nanotube by the ion irradiation. Since the graphite (002) spots in the selected area electron diffraction pattern are clearly observed even after the ion irradiation, the carbon layer in C-SiC nanotube has certain crystallinity. Moreover, the new multi-walled carbon nanotube with the graphitic shells completely parallel to the radial direction of nanotube is also produced inside the amorphous SiC tubular layer in the case of C-SiC nanotube with large caliber.