Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo

The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction using a molecular-beam eppitaxy chamber combined with an X-ray diffractometer. The growth of nanowries was found to start with the formation of zincblende structure, followed by the growth of the wurtzite structure. The wurtzite structure tended to form at a low growth temperature and a high growth rate.

Language	:	English
Journal	:	Japanese Journal of Applied Physics
Volume	:	55
Number	:	4S
Pages	:	p.04EJ04_1 - 04EJ04_4
Publication Year/Month	:	2016/04
Meeting title	:	2015 International Conference on Solid State Devices and Materials (SSDM 2015)
Held date	:	2015/09
Location (city)	:	Sapporo
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.7567/JJAP.55.04EJ04
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : BB20151459
JAEA Abstracts No. : 47000377
Paper Submission No. : 21049

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