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Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Au触媒GaAsナノワイヤにおける構造多形のX線回折による研究

高橋 正光; 神津 美和*; 佐々木 拓生

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo

The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction using a molecular-beam eppitaxy chamber combined with an X-ray diffractometer. The growth of nanowries was found to start with the formation of zincblende structure, followed by the growth of the wurtzite structure. The wurtzite structure tended to form at a low growth temperature and a high growth rate.

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パーセンタイル:68.84

分野:Physics, Applied

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