Comprehensive study and design of scaled metal/high-/Ge gate stacks with ultrathin aluminum oxide interlayers

Asahara, Ryohei*; Hideshima, Iori*; Oka, Hiroshi*; Minoura, Yuya*; Ogawa, Shingo*; Yoshigoe, Akitaka ; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Advanced metal/high-/Ge gate stacks with a sub-nm equivalent oxide thickness and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	106
Number	:	23
Pages	:	p.233503_1 - 233503_4
Publication Year/Month	:	2015/06
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Paper URL	:	https://doi.org/10.1063/1.4922447
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	放射光光電子分光; ゲートスタック構造; ナノテクノロジー
Research Facility	:	SPring-8(大型放射光施設)
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:63.75 Category:Physics, Applied
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Registration No. : AA20150644
JAEA Abstracts No. : 45000399
Paper Submission No. : 18666

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