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Report No.
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Visible range photoluminescence from single photon sources in 3C, 4H and 6H silicon carbide

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; Oshima, Takeshi; Johnson, B. C.*

The single photon sources (SPSs) in the visible spectral region were fabricated near the surface of semi-insulating (SI) 4H-silicon carbide (SiC), SI 6H-SiC substrates and 3C-SiC epitaxial films by annealing in dry oxygen. The photoluminescence (PL) with high intensity was observed from samples after oxygen annealing above 550 $$^{circ}$$C although blinking characteristics of PL were observed from samples annealed below 550 $$^{circ}$$C. Also, the samples annealed above 550 $$^{circ}$$C showed blinking characteristics after removing oxygen atoms terminating the surface by HF-etching. Therefore, we can conclude that the oxygen termination is important to obtain stable PL characteristics from the SPSs near the surface of SiC.

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