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その場放射光X線回折によるIII-Vエピ成長のひずみ解析

Strain analysis of III-V epitaxial growth by ${{it in situ}}$ synchrotron X-ray diffraction

佐々木 拓生; 高橋 正光

Sasaki, Takuo; Takahashi, Masamitsu

Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through in situ X-ray reciprocal space mapping (${{it in situ}}$ RSM). At the synchrotron facility SPring-8, a hybrid system of molecular beam epitaxy and X-ray diffractometry with a two-dimensional detector enabled us to perform ${{it in situ}}$ RSM at high-speed and high-resolution. Using this experimental setup, the strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In order to discuss this observation quantitatively, a strain relaxation model was proposed based on the Dodson-Tsao's kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. In addition to the single InGaAs layer, strain relaxation processes in multi-layer structures are discussed.

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