放射光その場X線回折による半導体成長機構の解明

Study of semiconductor growth mechanism using in situ synchrotron X-ray diffraction

高橋 正光

Takahashi, Masamitsu

An experimental approach to crystal growth dynamics using synchrotron X-ray diffraction is discussed. In the study of crystal growth, analysis of imperfect crystals lacking three-dimensional periodicity is inevitably required. Though diffuse scattering generated by such imperfect crystals is much weaker than the bulk Bragg diffraction, recent development of the synchrotron light source has enabled the in situ measurement of it during crystal growth. In this article, studies on surface structures, evolution of defects in growing films and the growth of nanostructures under molecular-beam epitaxy conditions are presented as well as a brief overview of the instrumentation.