Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to -ray irradiation

Takeyama, Akinori; Matsuda, Takuma*; Yokoseki, Takashi*; Mitomo, Satoshi*; Murata, Koichi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Oshima, Takeshi; Hijikata, Yasuto*

Effect of -ray irradiation under high temperature and humidity circumstances on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. In the case of irradiation under high humidity circumstance, trapped oxide and interface charges densities generated due to irradiation were smaller than those for irradiation in dry circumstance. It is concluded that humidity circumstance suppressed the degradation of the electrical properties due to irradiation including threshold voltage shift and leakage current.

Language	:	Japanese
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Meeting title	:	2016年(平成27年)第63回応用物理学会春季学術講演会
Held date	:	2016/03
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	炭化ケイ素(SiC); MOSFET(金属酸化膜形電界効果トランジスタ); ガンマ線照射; 電気的特性; 福島第一原子力発電所事故; Fukushima Daiichi Nuclear Power Station Accident
Research Facility	:	コバルト60照射施設
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Article of JAEA R&D Review	:
Cooperating Institute	:	サンケン電気; 埼玉大学

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Registration No. : BB20152501
JAEA Abstracts No. :
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