Optimum structures for -ray radiation resistant SiC-MOSFETs

Takeyama, Akinori; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; Yoshie, Toru*; Hijikata, Yasuto*

Oxide thickness dependence of -ray irradiation response on Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. As a result of irradiation, the threshold voltage V $_{th}$ for both SiC MOSFETs with gate oxide of 30 nm or 60 nm thick shifted to negative voltage-side gently. However, the V $_{th}$ for 60 nm thick more immediately decreased over 400 kGy. It is found that SiCMOSFETs with smaller thickness has a higher radiation tolerance.

Language	:	Japanese
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Meeting title	:	2016年(平成27年)第63回応用物理学会春季学術講演会
Held date	:	2016/03
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	炭化ケイ素(SiC); MOSFET(金属酸化膜形電界効果トランジスタ); ガンマ線照射; 耐放射線性; 福島第一原子力発電所事故; Fukushima Daiichi Nuclear Power Station Accident
Research Facility	:	コバルト60照射施設
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Article of JAEA R&D Review	:
Cooperating Institute	:	サンケン電気; 埼玉大学

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Registration No. : BB20152764
JAEA Abstracts No. :
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