Influence of gate bias on -ray radiation response of SiC MOSFETs

Takeyama, Akinori; Murata, Koichi*; Mitomo, Satoshi*; Matsuda, Takuma*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Oshima, Takeshi; Hijikata, Yasuto*

Deterioration of electrical property of SiCMOSFETs due to irradiation was reduced compared with no biased ones, when the SiC MOSFETs with switching bias were irradiated. In order to clarify this mechanism, SiCMOSFETs were irradiated up to 50 kGy with switching bias applied to gate oxide from 4.5 to 0 V. As a result, the large negative shift of threshold voltage V $_{th}$ due to irradiation with positive bias significantly recovered in the cases that the bias switched to zero. It shows electrical property of SiCMOSFETs were immediately relieved when applied bias was removed by switching.

Language	:	Japanese
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Meeting title	:	2016年(平成27年)第63回応用物理学会春季学術講演会
Held date	:	2016/03
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	炭化ケイ素(SiC); MOSFET(金属酸化膜形電界効果トランジスタ); 耐放射線性; ガンマ線照射; バイアス; 福島第一原子力発電所事故; Fukushima Daiichi Nuclear Power Station Accident
Research Facility	:	コバルト60照射施設
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Article of JAEA R&D Review	:
Cooperating Institute	:	サンケン電気; 埼玉大学

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Registration No. : BB20152766
JAEA Abstracts No. :
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