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Report No.

Influence of gate bias on $$gamma$$-ray radiation response of SiC MOSFETs

Takeyama, Akinori; Murata, Koichi*; Mitomo, Satoshi*; Matsuda, Takuma*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Oshima, Takeshi; Hijikata, Yasuto*

Deterioration of electrical property of SiCMOSFETs due to irradiation was reduced compared with no biased ones, when the SiC MOSFETs with switching bias were irradiated. In order to clarify this mechanism, SiCMOSFETs were irradiated up to 50 kGy with switching bias applied to gate oxide from 4.5 to 0 V. As a result, the large negative shift of threshold voltage V$$_{th}$$ due to irradiation with positive bias significantly recovered in the cases that the bias switched to zero. It shows electrical property of SiCMOSFETs were immediately relieved when applied bias was removed by switching.



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