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Report No.

Low temperature formation of Si(110)-16$$times$$2 through wet etching

Yano, Masahiro   ; Suzuki, Shota; Uozumi, Yuki; Asaoka, Hidehito  

We have observed roughness and cleanness of Si(110) cleaned by two types of wet etching and low temperature annealing by means of low energy electron diffraction (LEED), scanning tunneling microscope (STM) and auger electron spectroscopy (AES). We have succeeded to obtain clean and large 16 $$times$$ 2 surface by wet etching and low temperature annealing.



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