検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Low temperature formation of Si(110)-16$$times$$2 through wet etching

ウェットエッチングによる低温でのSi(110)-16$$times$$2形成

矢野 雅大  ; 鈴木 翔太; 魚住 雄輝; 朝岡 秀人 

Yano, Masahiro; Suzuki, Shota; Uozumi, Yuki; Asaoka, Hidehito

We have observed roughness and cleanness of Si(110) cleaned by two types of wet etching and low temperature annealing by means of low energy electron diffraction (LEED), scanning tunneling microscope (STM) and auger electron spectroscopy (AES). We have succeeded to obtain clean and large 16 $$times$$ 2 surface by wet etching and low temperature annealing.

Access

:

- Accesses

InCites™

:

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.