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Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2$$times$$1 surface; In situ synchrotron radiation photoemission study

Yoshigoe, Akitaka ; Yamada, Yoichi*; Taga, Ryo*; Ogawa, Shuichi*; Takakuwa, Yuji*

Synchrotron radiation photoelectron spectroscopy during the oxidation of the Si(100)2$$times$$1 surface at room temperature revealed the existence of the molecularly adsorbed oxygen, which was considered to be absent. The O 1s spectra was found to be similar to that of the oxidation of Si(111)7$$times$$7 surfaces. Also the molecular oxygen was appeared after the initial surface oxides, indicating that this was not a precursor for dissociation oxygen adsorption onto the clean surface. We have proposed presumable structural models for atomic configurations, where the molecular oxygen was resided on the oxidized silicon with two oxygen atoms at the backbonds.

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Category:Physics, Applied

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