検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Diluted magnetic semiconductors with narrow band gaps

Gu, B.; 前川 禎通

Gu, B.; Maekawa, Sadamichi

The diluted magnetic semiconductors (DMSs) have received considerable attention owing to potential applications based on the use of both charge and spin degrees of freedom in electronic devices. Historically, (Ga,Mn)As has received the most attention in DMSs, and so far the highest Curie temperature in (Ga,Mn)As has been $$T_{c}$$ = 190 K in the experiment. The substitution of divalent Mn atoms into trivalent Ga sites introduces hole carriers; thus, (Ga,Mn)As is a $$p$$-type DMS. Here, we propose a method to realize DMSs with $$p$$- and $$n$$-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn$$_{2}$$As$$_{2}$$, which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn$$_{2}$$Sb$$_{2}$$, of which the Curie temperature $$T_{c}$$ is predicted to be higher than that of Mn-doped BaZn$$_{2}$$As$$_{2}$$, the $$T_{c}$$ of which was up to 230 K in a recent experiment.

Access

:

- Accesses

InCites™

:

パーセンタイル:66.42

分野:Materials Science, Multidisciplinary

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.