Enhancement of SiO $_{2}$ /Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

Ogawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Takakuwa, Yuji*

Enhancement of SiO $_{2}$ /Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation was revealed by real time photoelectron spectroscopy using high intensity and high energy-resolution synchrotron radiation. This experimental result indicates the usefulness of the unified Si oxidation reaction model mediated by point defect generation.

Language	:	English
Journal	:	Journal of Chemical Physics
Volume	:	145
Number	:	11
Pages	:	p.114701_1 - 114701_7
Publication Year/Month	:	2016/09
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Paper URL	:	https://doi.org/10.1063/1.4962671
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	表面界面; 酸化; 放射光光電子分光
Research Facility	:	SPring-8(大型放射光施設)
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InCites™	:	Percentile:17.70 Category:Chemistry, Physical
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Registration No. : AA20160328
JAEA Abstracts No. : 45000414
Paper Submission No. : 18681

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Enhancement of SiO/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

Enhancement of SiO $_{2}$ /Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation