Investigation of oxide formation process in thermally oxidized GaN surface

Yamada, Takahiro*; Yoshigoe, Akitaka ; Ito, Joyo*; Asahara, Ryohei*; Nozaki, Mikito*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

To achieve high performance of GaN MOS devices, high quality interfaces between insulator and GaN are essentially needed. The precise control of native surface oxide and/or interfacial oxide layer is important. In this study, oxide formation process in thermally oxidized GaN surface is analyzed by using synchrotron radiation photoelectron spectroscopy.