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Time evolution of morphology and electronic state of oxidized Si(110) during reduction process

還元過程における酸化Si(110)の構造と電子状態の時間発展

矢野 雅大  ; 魚住 雄輝*; 保田 諭  ; 朝岡 秀人 

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Asaoka, Hidehito

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

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