VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with FeTsuchiya, Tomoki*; Kobayashi, Ryota*; Kubota, Takahide*; Saito, Kotaro*; Ono, Kanta*; Ohara, Takashi 
; Nakao, Akiko*; Takanashi, Koki*
MnVAl Heusler alloy films were epitaxially grown on MgO(100) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type MnVAl order was controlled by the deposition temperature. A2-type MnVAl films showed no spontaneous magnetization, while L21-type MnVAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu/cm
at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type MnVAl film deposited at 400
C. A bilayer sample of the antiferromagnetic A2-type MnVAl and Fe showed an exchange bias of 120 Oe at 10 K.
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: | English |
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: | 51 |
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: | 6 |
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: | p.065001_1 - 065001_7 |
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: | 2018/02 |
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Percentile:45.99 Category:Physics, Applied |
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