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Mn$$_{2}$$VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tsuchiya, Tomoki*; Kobayashi, Ryota*; Kubota, Takahide*; Saito, Kotaro*; Ono, Kanta*; Ohara, Takashi ; Nakao, Akiko*; Takanashi, Koki*

Mn$$_{2}$$VAl Heusler alloy films were epitaxially grown on MgO(100) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn$$_{2}$$VAl order was controlled by the deposition temperature. A2-type Mn$$_{2}$$VAl films showed no spontaneous magnetization, while L21-type Mn$$_{2}$$VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu/cm$$^{3}$$ at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn$$_{2}$$VAl film deposited at 400$$^{circ}$$C. A bilayer sample of the antiferromagnetic A2-type Mn$$_{2}$$VAl and Fe showed an exchange bias of 120 Oe at 10 K.

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Category:Physics, Applied

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