VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with FeVAlホイスラー合金薄膜; 鉄を伴う層状構造における反強磁性の発現と交換バイアス土屋 朋生*; 小林 亮太*; 窪田 崇秀*; 斉藤 耕太郎*; 小野 寛太*; 大原 高志 
; 中尾 朗子*; 高梨 弘毅*
Tsuchiya, Tomoki*; Kobayashi, Ryota*; Kubota, Takahide*; Saito, Kotaro*; Ono, Kanta*; Ohara, Takashi; Nakao, Akiko*; Takanashi, Koki*
MnVAl Heusler alloy films were epitaxially grown on MgO(100) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type MnVAl order was controlled by the deposition temperature. A2-type MnVAl films showed no spontaneous magnetization, while L21-type MnVAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu/cm
at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type MnVAl film deposited at 400
C. A bilayer sample of the antiferromagnetic A2-type MnVAl and Fe showed an exchange bias of 120 Oe at 10 K.
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: | p.065001_1 - 065001_7 |
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パーセンタイル：45.99 分野：Physics, Applied |
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