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論文

Mn$$_{2}$$VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

土屋 朋生*; 小林 亮太*; 窪田 崇秀*; 斉藤 耕太郎*; 小野 寛太*; 大原 高志; 中尾 朗子*; 高梨 弘毅*

Journal of Physics D; Applied Physics, 51(6), p.065001_1 - 065001_7, 2018/02

 被引用回数:1 パーセンタイル:100(Physics, Applied)

Mn$$_{2}$$VAl Heusler alloy films were epitaxially grown on MgO(100) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn$$_{2}$$VAl order was controlled by the deposition temperature. A2-type Mn$$_{2}$$VAl films showed no spontaneous magnetization, while L21-type Mn$$_{2}$$VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu/cm$$^{3}$$ at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn$$_{2}$$VAl film deposited at 400$$^{circ}$$C. A bilayer sample of the antiferromagnetic A2-type Mn$$_{2}$$VAl and Fe showed an exchange bias of 120 Oe at 10 K.

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