Pressure studies on the antiferromagnetic Kondo semiconductor Ce(RuRh)Al (x = 0,0.1)

Tanida, Hiroshi*; Kitagawa, Kentaro*; Tateiwa, Naoyuki   ; Sera, Masafumi*; Nishioka, Takashi*

We have done high pressure experiments on Ce(RuRh)Al (x = 0 and 0.1) to study pressure-induced phase transitions from the antiferromagnetic to paramagnetic state at . Experimental data of the electrical resistivity suggest that the - hybridization gap could be not necessary to form the unusual AFM order. The pressure effects on the magnetic susceptibility is also studied. We discuss a difference in the pressure response of the magnetic susceptibility based the electronic state between x = 0 and 0.1.