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Pressure studies on the antiferromagnetic Kondo semiconductor Ce(Ru$$_{1-x}$$Rh$$_x$$)$$_2$$Al$$_{10}$$ (x = 0,0.1)

Tanida, Hiroshi*; Kitagawa, Kentaro*; Tateiwa, Naoyuki  ; Sera, Masafumi*; Nishioka, Takashi*

We have done high pressure experiments on Ce(Ru$$_{1-x}$$Rh$$_x$$)$$_2$$Al$$_{10}$$ (x = 0 and 0.1) to study pressure-induced phase transitions from the antiferromagnetic to paramagnetic state at $$P_c$$. Experimental data of the electrical resistivity suggest that the $$c$$-$$f$$ hybridization gap could be not necessary to form the unusual AFM order. The pressure effects on the magnetic susceptibility is also studied. We discuss a difference in the pressure response of the magnetic susceptibility based the electronic state between x = 0 and 0.1.

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Category:Materials Science, Multidisciplinary

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