Characterization of SiO $_{2}$ reduction reaction region at void periphery on Si(110)

Yano, Masahiro ; Uozumi, Yuki*; Yasuda, Satoshi ; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka ; Asaoka, Hidehito

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

Language	:	English
Journal	:	Japanese Journal of Applied Physics
Volume	:	57
Number	:	8S1
Pages	:	p.08NB13_1 - 08NB13_4
Publication Year/Month	:	2018/07
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Paper URL	:	https://doi.org/10.7567/JJAP.57.08NB13
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Keywords	:	no keyword
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Registration No. : AA20180322
JAEA Abstracts No. : 47000188
Paper Submission No. : 20865

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Characterization of SiO reduction reaction region at void periphery on Si(110)

Characterization of SiO $_{2}$ reduction reaction region at void periphery on Si(110)