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Characterization of SiO$$_{2}$$ reduction reaction region at void periphery on Si(110)

Yano, Masahiro  ; Uozumi, Yuki*; Yasuda, Satoshi  ; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka ; Asaoka, Hidehito 

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

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Category:Physics, Applied

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