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Characterization of SiO$$_{2}$$ reduction reaction region at void periphery on Si(110)

Si(110)上におけるボイド縁のSiO$$_{2}$$還元反応領域の特性

矢野 雅大; 魚住 雄輝*; 保田 諭; 塚田 千恵*; 吉田 光*; 吉越 章隆; 朝岡 秀人

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka; Asaoka, Hidehito

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

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パーセンタイル:100

分野:Physics, Applied

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