reduction reaction region at void periphery on Si(110)還元反応領域の特性矢野 雅大 
; 魚住 雄輝*; 保田 諭 ; 塚田 千恵*; 吉田 光*; 吉越 章隆 ; 朝岡 秀人
Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka; Asaoka, Hidehito
We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.
使用言語 |
: | English |
|---|---|---|
掲載資料名 |
: | |
巻 |
: | 57 |
号 |
: | 8S1 |
ページ数 |
: | p.08NB13_1 - 08NB13_4 |
発行年月 |
: | 2018/07 |
キーワード |
: | no keyword |
論文URL |
: |
|
|---|---|---|
論文解説記事 |
: |
Access |
: |
- Accesses |
|---|---|---|
InCites™ |
: |
パーセンタイル：9.42 分野：Physics, Applied |
Altmetrics |
: |
[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.
