検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Characterization of SiO$$_{2}$$ reduction reaction region at void periphery on Si(110)

Si(110)上におけるボイド縁のSiO$$_{2}$$還元反応領域の特性

矢野 雅大   ; 魚住 雄輝*; 保田 諭   ; 塚田 千恵*; 吉田 光*; 吉越 章隆 ; 朝岡 秀人  

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka; Asaoka, Hidehito

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

Access

:

- Accesses

InCites™

:

パーセンタイル:8.58

分野:Physics, Applied

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.