Anisotropic reconstructed silicon (110)-"162" surface

Asaoka, Hidehito  

Control of low dimensional nanostructures on semiconductor surfaces is one of the most attractive studies. Among the semiconductor surfaces, a reconstructed Si(110)-"162" is a promising template for nanostructure, because of its one dimensional up-and-down terrace of 2.5 nm width. We succeeded in preparation of ordered Si, Ge(110)-"162" single-domain surfaces. One-dimensional structures with C molecules and Si, Ge nanodot formed on the surfaces. Furthermore, we determined the initial oxidation and the oxide layer decomposition process on reconstructed Si(110)-"162" surface.