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Report No.

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

Kubota, Masato; Nigo, Seisuke*; Kato, Seiichi*; Amemiya, Kenta*

We measured the X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects which exhibits the resistance random access memory effect. For the first time, we detected changes in the electronic structure owing to the memory effect. A major difference in spectrum was observed near the O K-absorption edge.



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Category:Nanoscience & Nanotechnology



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