Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

Kubota, Masato ; Nigo, Seisuke*; Kato, Seiichi*; Amemiya, Kenta*

We measured the X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects which exhibits the resistance random access memory effect. For the first time, we detected changes in the electronic structure owing to the memory effect. A major difference in spectrum was observed near the O K-absorption edge.