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Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

アモルファスアルミ酸化物のメモリ効果による電子状態変化の直接観測

久保田 正人; 児子 精祐*; 加藤 誠一*; 雨宮 健太*

Kubota, Masato; Nigo, Seisuke*; Kato, Seiichi*; Amemiya, Kenta*

アルミ酸化膜のメモリ機能と微視的な物性の関係を明らかにするために、放射光吸収測定を行い、電気特性の変化に伴う酸素サイトの電子状態の変化を直接的に捉えることに成功した。

We measured the X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects which exhibits the resistance random access memory effect. For the first time, we detected changes in the electronic structure owing to the memory effect. A major difference in spectrum was observed near the O K-absorption edge.

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