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Ce substitution and reduction annealing effects on electronic states in Pr$$_{2-x}$$Ce$$_x$$CuO$$_4$$ studied by Cu $$K$$-edge X-ray absorption spectroscopy

Pr$$_{2-x}$$Ce$$_x$$CuO$$_4$$におけるCe置換と還元アニールがもたらす電子状態変化の銅$$K$$吸収端X線吸収分光観測

浅野 駿*; 石井 賢司*; 松村 大樹; 辻 卓也; 伊奈 稔哲*; 鈴木 謙介*; 藤田 全基*

Asano, Shun*; Ishii, Kenji*; Matsumura, Daiju; Tsuji, Takuya; Ina, Toshiaki*; Suzuki, Kensuke*; Fujita, Masaki*

We investigated the Ce substitution and reduction annealing effects on the electronic states at copper sites by Cu $$K$$-edge X-ray absorption near-edge structure measurements in Pr$$_{2-x}$$Ce$$_x$$CuO$$_{4+alpha-delta}$$ (PCCO) with varying $$x$$ and $$delta$$ (amount of oxygen loss during annealing). Absorption near-edge spectra were modified by Ce substitution and reduction annealing similarly with increasing $$x$$ and $$delta$$. Considering electron doping by Ce substitution, this similarity indicates an increase in electron number at the copper sites due to annealing ($$n_{AN}$$). Furthermore, quantitative analyses of the spectra clarified that the number of Cu$$^+$$ sites, corresponding to the induced electron number by Ce substitution increases linearly with $$x$$ in the as-sintered PCCO, whereas $$n_{AN}$$ is not exactly equal to 2$$delta$$. For each $$x$$-fixed sample, $$n_{AN}$$tends to exceed 2$$delta$$ with increasing $$delta$$, suggesting the emergence of two types of carrier due to annealing.

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パーセンタイル:100

分野:Physics, Multidisciplinary

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