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Steam oxidation of silicon carbide at high temperature up to 1800$$^{circ}$$C

Pham, V. H.   ; Nagae, Yuji ; Kurata, Masaki ; Furumoto, Kenichiro*; Sato, Hisaki*; Ishibashi, Ryo*; Yamashita, Shinichiro   

Silicon carbide has been considered as a potential candidate for fuel cladding. Many studies have been conducted to investigate the steam oxidation of SiC at temperatures below 1600$$^{circ}$$C. However, the steam oxidation behavior of SiC at temperatures above 1600$$^{circ}$$C remained unclear due to the lack of test facilities. In this study, we investigated the steam oxidation of SiC at temperatures ranging from 1400-1800$$^{circ}$$C using a newly developed laser heating facility.

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English

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日本原子力学会2019年春の年会

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2019/03

Location (city)

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水戸

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日本

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no keyword

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Press Release

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Article of JAEA R&D Review

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- Accesses

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