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Steam oxidation of silicon carbide at high temperature up to 1800$$^{circ}$$C

Pham, V. H.   ; Nagae, Yuji ; Kurata, Masaki ; Furumoto, Kenichiro*; Sato, Hisaki*; Ishibashi, Ryo*; Yamashita, Shinichiro   

Silicon carbide has been considered as a potential candidate for fuel cladding. Many studies have been conducted to investigate the steam oxidation of SiC at temperatures below 1600$$^{circ}$$C. However, the steam oxidation behavior of SiC at temperatures above 1600$$^{circ}$$C remained unclear due to the lack of test facilities. In this study, we investigated the steam oxidation of SiC at temperatures ranging from 1400-1800$$^{circ}$$C using a newly developed laser heating facility.



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