A Radiation hardened CMOS image sensor with almost zero dark current increase during radiation

Watanabe, Takashi*; Takeuchi, Tomoaki ; Ozawa, Osamu*; Komanome, Hirohisa*; Akahori, Tomoyuki*; Tsuchiya, Kunihiko

Radiation hard image sensors have been developed past decades among the world. Almost papers discussed properties before and after radiation but images during radiation were not described yet. We have developed a new type of rad-hard pixel and integrated to 1.3M-pixel, 18-bit digital CMOS image sensor. Pixel area consists of several types of variation and the sensor has been analyzed during gamma ray radiation higher than 1 kGy/h up to 200 kGy. As the result, one type of pixel showed almost zero dark current increase at whole period.

Language	:	English
Journal	:	Proceedings of 2019 International Image Sensor Workshop (IISW 2019) (Internet)
Volume	:
Number	:
Pages	:	4 Pages
Publication Year/Month	:	2019/06
Meeting title	:	2019 International Image Sensor Workshop (IISW 2019)
Held date	:	2019/06
Location (city)	:	Snowbird
Location (country)	:	U.S.A.
Patent information	:
PDF	:
Paper URL	:	https://www.imagesensors.org/Past%20Workshops/2019%20Workshop/2019%20Papers/R46.pdf
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	イメージセンサ; 耐放射線性; CMOS; 暗電流; ガンマ線照射; カメラ; 福島; 廃止措置
Research Facility	:	コバルト60照射施設
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Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : BB20191061
JAEA Abstracts No. :
Paper Submission No. : 28514

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