Visualizing cation vacancies in Ce:GdAlGaO scintillators by gamma-ray-induced positron annihilation lifetime spectroscopy

Fujimori, Kosuke*; Kitaura, Mamoru*; Taira, Yoshitaka*; Fujimoto, Masaki*; Zen, H.*; Watanabe, Shinta*; Kamada, Kei*; Okano, Yasuaki*; Kato, Masahiro*; Hosaka, Masahito*; Yamazaki, Junichiro*; Hirade, Tetsuya  ; Kobayashi, Yoshinori*; Onishi, Akimasa*

To clarify the existence of cation vacancies in Ce-doped GdAlGaO (Ce:GAGG) scintillators, we performed gamma-ray-induced positron annihilation lifetime spectroscopy (GiPALS). GiPAL spectra of GAGG and Ce:GAGG comprised two exponential decay components, which were assigned to positron annihilation at bulk and defect states. By an analogy with Ce:YAlO, the defect-related component was attributed to Al/Ga-O divacancy complexes. This component was weaker for Ce, Mg:GAGG, which correlated with the suppression of shallow electron traps responsible for phosphorescence. Oxygen vacancies were charge compensators for Al/Ga vacancies. The lifetime of the defect-related component was significantly changed by Mg co-doping. This was understood by considering aggregates of Mg ions at Al/Ga sites with oxygen vacancies, which resulted in the formation of vacancy clusters.