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Report No.

Comprehensive physical and electrical characterizations of NO nitrided SiO$$_{2}$$/4H-SiC(11$$overline{2}$$0) interfaces

Nakanuma, Takato*; Iwakata, Yu*; Watanabe, Arisa*; Hosoi, Takuji*; Kobayashi, Takuma*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka ; Shimura, Takayoshi*; Watanabe, Heiji*

Nitridation of SiO$$_{2}$$/4H-SiC(11$$overline{2}$$0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO$$_{2}$$/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage ($$C-V$$) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the $$C-V$$ curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.



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Category:Physics, Applied



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