Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

Amekura, Hiroshi*; Toulemonde, M.*; Narumi, Kazumasa*; Li, R.*; Chiba, Atsuya*; Hirano, Yoshimi*; Yamada, Keisuke*; Yamamoto, Shunya*; Ishikawa, Norito ; Okubo, Nariaki ; Saito, Yuichi*

We report the track formation of 10 nm in diameter in silicon irradiated with 6 MeV C $_{60}$ , i.e., much lower energy than the previously reported energy threshold.

Language	:	English
Journal	:	Scientific Reports (Internet)
Volume	:	11
Number	:	1
Pages	:	p.185_1 - 185_11
Publication Year/Month	:	2021/01
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Paper URL	:	https://doi.org/10.1038/s41598-020-80360-8
DOI for research data	:
Keywords	:	イオン照射; 照射損傷
Research Facility	:	タンデム加速器
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Article of JAEA R&D Review	:
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Registration No. : AA20210868
JAEA Abstracts No. : 50000508
Paper Submission No. : 25265

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