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Report No.

Paramagnetic spin Hall magnetoresistance

Oyanagi, Koichi*; Gomez-Perez, J. M.*; Zhang, X.-P.*; Kikkawa, Takashi*; Chen, Y.*; Sagasta, E.*; Chuvilin, A.*; Hueso, L. E.*; Golovach, V. N.*; Sebastian Bergeret, F.*; Casanova, F.*; Saito, Eiji

We report the observation of the spin Hall magnetoresistance (SMR) in a paramagnetic insulator. By measuring the transverse resistance in a Pt/Gd$$_3$$Ga$$_5$$O$$_{12}$$ (GGG) system at low temperatures, paramagnetic SMR is found to appear with an intensity that increases with the magnetic field aligning GGG's spins. The observed effect is well supported by a microscopic SMR theory, which provides the parameters governing the spin transport at the interface. Our findings clarify the mechanism of spin exchange at a Pt/GGG interface, and demonstrate tunable spin-transfer torque through the field-induced magnetization of GGG. In this regard, paramagnetic insulators offer a key property for future spintronic devices.



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Category:Materials Science, Multidisciplinary



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