Paramagnetic spin Hall magnetoresistance

常磁性スピンホール磁気抵抗

大柳 洸一*; Gomez-Perez, J. M.*; Zhang, X.-P.*; 吉川 貴史*; Chen, Y.*; Sagasta, E.*; Chuvilin, A.*; Hueso, L. E.*; Golovach, V. N.*; Sebastian Bergeret, F.*; Casanova, F.*; 齊藤 英治

Oyanagi, Koichi*; Gomez-Perez, J. M.*; Zhang, X.-P.*; Kikkawa, Takashi*; Chen, Y.*; Sagasta, E.*; Chuvilin, A.*; Hueso, L. E.*; Golovach, V. N.*; Sebastian Bergeret, F.*; Casanova, F.*; Saito, Eiji

We report the observation of the spin Hall magnetoresistance (SMR) in a paramagnetic insulator. By measuring the transverse resistance in a Pt/GdGaO (GGG) system at low temperatures, paramagnetic SMR is found to appear with an intensity that increases with the magnetic field aligning GGG's spins. The observed effect is well supported by a microscopic SMR theory, which provides the parameters governing the spin transport at the interface. Our findings clarify the mechanism of spin exchange at a Pt/GGG interface, and demonstrate tunable spin-transfer torque through the field-induced magnetization of GGG. In this regard, paramagnetic insulators offer a key property for future spintronic devices.