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論文

Paramagnetic spin Hall magnetoresistance

大柳 洸一*; Gomez-Perez, J. M.*; Zhang, X.-P.*; 吉川 貴史*; Chen, Y.*; Sagasta, E.*; Chuvilin, A.*; Hueso, L. E.*; Golovach, V. N.*; Sebastian Bergeret, F.*; et al.

Physical Review B, 104(13), p.134428_1 - 134428_14, 2021/10

 被引用回数:8 パーセンタイル:73.98(Materials Science, Multidisciplinary)

We report the observation of the spin Hall magnetoresistance (SMR) in a paramagnetic insulator. By measuring the transverse resistance in a Pt/Gd$$_3$$Ga$$_5$$O$$_{12}$$ (GGG) system at low temperatures, paramagnetic SMR is found to appear with an intensity that increases with the magnetic field aligning GGG's spins. The observed effect is well supported by a microscopic SMR theory, which provides the parameters governing the spin transport at the interface. Our findings clarify the mechanism of spin exchange at a Pt/GGG interface, and demonstrate tunable spin-transfer torque through the field-induced magnetization of GGG. In this regard, paramagnetic insulators offer a key property for future spintronic devices.

論文

Absence of evidence of spin transport through amorphous Y$$_3$$Fe$$_5$$O$$_{12}$$

Gomez-Perez, J. M.*; 大柳 洸一*; 八尋 黎明*; Ramos, R.*; Hueso, L. E.*; 齊藤 英治; Casanova, F.*

Applied Physics Letters, 116(3), p.032401_1 - 032401_5, 2020/01

 被引用回数:9 パーセンタイル:54.31(Physics, Applied)

We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

論文

Tunable sign change of spin hall magnetoresistance in Pt/NiO/YIG structures

Hou, D.*; Qiu, Z.*; Barker, J.*; 佐藤 浩司*; 山本 慧; V$'e$lez, S.*; Gomez-Perez, J. M.*; Hueso, L. E.*; Casanova, F.*; 齊藤 英治

Physical Review Letters, 118(14), p.147202_1 - 147202_6, 2017/04

 被引用回数:107 パーセンタイル:97.24(Physics, Multidisciplinary)

Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of magnetic structure in antiferromagnets for transport of pure spin current in multilayers.

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