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Formation of monolayer V$$_5$$Se$$_8$$ from multilayer VSe$$_2$$ films via V- and Se-desorption

Sumida, Kazuki   ; Kusaka, Shotaro*; Takeda, Yukiharu   ; Kobayashi, Katsuyoshi*; Hirahara, Toru*

We systematically investigated the electronic properties of monolayer and multilayer vanadium selenide films grown with different conditions using in situ angle-resolved photoemission spectroscopy and first-principles calculations. We observed the band dispersions of pristine VSe$$_2$$ in a sample grown at substrate temperature ($$T_{rm sub}$$) of 250$$^{circ}$$C, while the significant modulations of the Se-derived bands can be seen at $$T_{rm sub}$$ = 380$$^{circ}$$C. For $$T_{rm sub}$$ = 420$$^{circ}$$C, we found that the V self-intercalated V$$_5$$Se$$_8$$ was formed. As a simple and convenient way, we also demonstrate that the monolayer V$$_5$$Se$$_8$$ can be fabricated by annealing from the multilayer VSe$$_2$$ film, and the possible formation mechanism is discussed. The establishment of the growth methods of V$$_5$$Se$$_8$$ film and verifying its electronic properties provide the substantial step for the creation of the 2D vDW heterostructures.



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Category:Materials Science, Multidisciplinary



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